MOSFET degradation under DC and RF Fowler-Nordheim stress

Cattaneo A, Pinarello S, Müller JE, Weigel R (2014)

Publication Type: Conference contribution

Publication year: 2014

Pages Range: 230-233

Event location: Venice IT

DOI: 10.1109/ESSDERC.2014.6948802

Abstract

Fowler-Nordheim (F-N) stress is reported to be one of the most severe wear-out mechanisms for high-frequency MOSFET applications like PAs and RF switches. Previous studies of this degradation process were limited to the DC-static case only and standard empirical models were proposed. In this work a novel general physical model is developed, which correctly describes the ageing of electrical parameters under DC stress. This is made possible by taking into account the hole injection into the gate oxide. Finally this study extends the understanding of F-N degradation to RF regime. In this case a quasi-static sum of the degradation rate is adopted to accurately model and predict the performance worsening; the wear-out shows no frequency dependency in the range up to 4Ghz.

Authors with CRIS profile

Andrea Cattaneo Lehrstuhl für Technische Elektronik Sandro Pinarello Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

How to cite

APA:

Cattaneo, A., Pinarello, S., Müller, J.-E., & Weigel, R. (2014). MOSFET degradation under DC and RF Fowler-Nordheim stress. In Proceedings of the 44th European Solid State Device Research Conference (ESSDERC) (pp. 230-233). Venice, IT.

MLA:

Cattaneo, Andrea, et al. "MOSFET degradation under DC and RF Fowler-Nordheim stress." Proceedings of the 44th European Solid State Device Research Conference (ESSDERC), Venice 2014. 230-233.

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