Tessarek C, Dieker C, Spiecker E, Christiansen S (2013)
Publication Status: Published
Publication Type: Journal article
Publication year: 2013
Publisher: Japan Society of Applied Physics
Book Volume: 52
Journal Issue: 8
This paper reports on the growth of GaN nanorods and wires by metal-organic vapor phase epitaxy. Density, height and diameter are strongly influenced by the growth time. A deposition time of a few minutes leads to the formation of GaN nanorods. Increasing the deposition time up to 1 h yields wires with heights exceeding 47 mu m. Transmission electron microscopy and convergent beam electron diffraction measurements are showing the presence of N- and Ga-polar GaN in a single nanorod. Cathodoluminescence measurements are performed showing the appearance of whispering gallery modes. Due to slight tapering of the wires the whispering gallery modes can be spectrally tuned by changing the position of the exposing electron beam at the sidewall facet of the rod. (C) 2013 The Japan Society of Applied Physics
APA:
Tessarek, C., Dieker, C., Spiecker, E., & Christiansen, S. (2013). Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires. Japanese Journal of Applied Physics, 52(8). https://doi.org/10.7567/JJAP.52.08JE09
MLA:
Tessarek, Christian, et al. "Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires." Japanese Journal of Applied Physics 52.8 (2013).
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