Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

Will J, Gröschel A, Bergmann C, Spiecker E, Magerl A (2014)

Publication Status: Published

Publication Type: Journal article

Publication year: 2014

Journal

Publisher: American Institute of Physics (AIP)

Book Volume: 115

Journal Issue: 12

DOI: 10.1063/1.4868586

Abstract

X-ray Pendellosung fringes from three silicon single crystals measured at 900 degrees C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm(2)) similar to published data. Further, an increased nucleation rate by a factor of similar to 13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 degrees C. (C) 2014 AIP Publishing LLC.

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APA:

Will, J., Gröschel, A., Bergmann, C., Spiecker, E., & Magerl, A. (2014). Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115(12). https://doi.org/10.1063/1.4868586

MLA:

Will, Johannes, et al. "Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction." Journal of Applied Physics 115.12 (2014).

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