Will J, Gröschel A, Bergmann C, Weißer M, Magerl A (2014)
Publication Status: Published
Publication Type: Journal article
Publication year: 2014
Publisher: AMER INST PHYSICS
Book Volume: 105
Journal Issue: 11
DOI: 10.1063/1.4896184
The oxygen precipitation of highly (17.5 m Omega cm) and moderately (4.5 Omega cm) boron (B) doped silicon (Si) crystals at 780 degrees C is investigated by following in-situ the evolution of diffraction Pendellosung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 degrees C for 30 h, the precipitate density rho is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on rho is dramatically higher for the samples directly heated to 780 degrees C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies sigma with those found at 900 degrees C in a previous publication. (c) 2014 AIP Publishing LLC.
APA:
Will, J., Gröschel, A., Bergmann, C., Weißer, M., & Magerl, A. (2014). Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction. Applied Physics Letters, 105(11). https://doi.org/10.1063/1.4896184
MLA:
Will, Johannes, et al. "Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction." Applied Physics Letters 105.11 (2014).
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