Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods.

Tessarek C, Rechberger S, Dieker C, Heilmann M, Spiecker E, Christiansen SH (2017)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Book Volume: 28

Pages Range: 485601

Journal Issue: 48

URI: http://iopscience.iop.org/article/10.1088/1361-6528/aa9050/pdf

DOI: 10.1088/1361-6528/aa9050

Abstract

GaN microrods are used as a basis for subsequent InGaN quantum well (QW) and quantum dot deposition by metal-organic vapor phase epitaxy. The coverage of the shell along the sidewall of rods is dependent on the rod growth time and a complete coverage is obtained for shorter rod growth times. Transmission electron microscopy measurements are performed to reveal the structural properties of the InGaN layer on the sidewall facet and on the top facet. The presence of layers in the microrod and on the microrod surface will be discussed with respect to GaN and InGaN growth. A detailed model will be presented explaining the formation of multiple SiN layers and the partial and full coverage of the shell around the core. Cathodoluminescence measurements are performed to analyze the InGaN emission properties along the microrod and to study the microresonator properties of such hexagonal core-shell structures. High quality factor whispering gallery modes with [Formula: see text] are reported for the first time in a GaN microrod/InGaN non-polar QW core-shell geometry. The GaN/InGaN core-shell microrods are expected to be promising building blocks for low-threshold laser diodes and ultra-sensitive optical sensors.

Authors with CRIS profile

Stefanie Rechberger Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Christel Dieker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Martin Heilmann Lehrstuhl für Experimentalphysik Erdmann Spiecker Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung) Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE) Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Tessarek, C., Rechberger, S., Dieker, C., Heilmann, M., Spiecker, E., & Christiansen, S.H. (2017). Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods. Nanotechnology, 28(48), 485601. https://doi.org/10.1088/1361-6528/aa9050

MLA:

Tessarek, Christian, et al. "Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods." Nanotechnology 28.48 (2017): 485601.

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