Lautner J, Piepenbreier B (2015)
Publication Type: Conference contribution
Publication year: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Edited Volumes: 9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia
Conference Proceedings Title: ICPE-ECCE Asia
Event location: Seoul, South Korea
ISBN: 978-8-9570-8254-6
DOI: 10.1109/ICPE.2015.7167840
This paper presents a comprehensive study of the GaN HEMT switching performance in a phase-leg configuration with special focus on the impact of different parasitic effects. Therefore, a simulation model of a double pulse test circuit with GaN devices and including parasitic elements is proposed. The causes of parasitic inductances and capacitances are discussed and their effects are analyzed. Furthermore, the influence of the gate resistance value and dead time is investigated. A double pulse tester was designed to experimentally verify the simulation results. This paper shows the switching transients of both devices in a phase-leg configuration for varying parameters graphically and offers a better insight into the switching behavior of GaN transistors. The understanding of the parasitic effects and varying parameter enables improved design and performance of fast switching power converters.
APA:
Lautner, J., & Piepenbreier, B. (2015). Analysis of GaN HEMT switching behavior. In ICPE-ECCE Asia. Seoul, South Korea: Institute of Electrical and Electronics Engineers Inc..
MLA:
Lautner, Jennifer, and Bernhard Piepenbreier. "Analysis of GaN HEMT switching behavior." Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia, Seoul, South Korea Institute of Electrical and Electronics Engineers Inc., 2015.
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