Excitons and phonons at vertical and lateral interfaces in ultrathin semiconductors (SFB 1719 S04)
Third Party Funds Group - Sub project
Acronym: SFB 1719 S04
Start date : 01.10.2025
End date : 30.06.2029
Overall project details
Overall project
ChemPrint: Next-generation printed semiconductors: Atomic-level engineering via molecular surface chemistry (SFB 1719)
Oct. 1, 2025 - June 30, 2029
Project details
Scientific Abstract
Scientific Abstract
In project S4, we will investigate the fundamental physical properties of novel solution-grown ultrathin two-dimensional (2D) semiconductors and their vertical and lateral heterostructures by advanced optical spectroscopy. The physical properties to be determined include the crystalline structure and the vibrational, electronic, and optical properties of the 2D semiconductors. In addition, we will explore the effect of substrate and interface induced strain and the role of defects and grain boundaries on the physical properties. Our studies will enable us and our ChemPrint partners to control thin-film growth via in-situ monitoring of spectroscopic signals, to understand lateral and vertical heterostructure formation, and to pattern 2D semiconductors via patterned surface functionalization.
We will focus on transition-metal dichalcogenides (TMDCs) MoS2, HfS2 and on SnS(e)2 , on the V-VI semiconductors Sb2S3, Sb2Se3 , and on patterned 2D semiconductors.