Third Party Funds Group - Sub project
Acronym: SFB 1719 C01
Start date : 01.10.2025
End date : 30.06.2029
Project C1 aims at controlling the morphology of the semiconductor deposit using the interactions that appear during sALD growth between the substrate, the solid deposit, and the liquid. Using information from M1, M3, M4, M5 and self-assembled monolayers from F6 to set the density of nucleation sites and interfacial energies, ligands and solvents will be adjusted to direct the growth mode from homogeneously vertical (film) to three-dimensional (hemispherical) or two-dimensional (planar flakes). Individual steps will be identified with C5, C6, F5, the structure and properties of the deposits determined with S1-S5.
Project C1 aims at controlling the morphology of the semiconductor deposit using the interactions that appear during sALD growth between the substrate, the solid deposit, and the liquid. Using information from M1, M3, M4, M5 and self-assembled monolayers from F6 to set the density of nucleation sites and interfacial energies, ligands and solvents will be adjusted to direct the growth mode from homogeneously vertical (film) to three-dimensional (hemispherical) or two-dimensional (planar flakes). Individual steps will be identified with C5, C6, F5, the structure and properties of the deposits determined with S1-S5.