Novel Approach to SiC Power Device Fabrication: High-Purity Semi-insulating Substrates Doped by Energy-Filtered Ion Implantation
Internally funded project
Start date : 01.09.2021
Project details
Short description
Kurzbeschreibung zu:
Novel Approach to SiC Power Device Fabrication: High-Purity Semi-insulating Substrates Doped by Energy-Filtered Ion Implantation.
Das Forschungsprojekt wird im Rahmen eines LEB-Promotionsvorhabens in Zusammenarbeit mit dem Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB) bearbeitet.
Scientific Abstract
Abstract zu:
Novel Approach to SIC Power Device Fabrication: High-Purity Semi-insulating Substrates Doped by Energy-Filtered Ion Implantation
