Prof. Dr. Heiko Weber

Chair of Applied Physics (LAP)

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution Lightwave-controlled electron dynamics in graphene (2019) Heide C, Higuchi T, Ullmann K, Weber HB, Hommelhoff P Conference contribution Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime (2019) Heide C, Boolakee T, Higuchi T, Weber HB, Hommelhoff P Journal article Coherent Electron Trajectory Control in Graphene (2018) Heide C, Higuchi T, Weber HB, Hommelhoff P Journal article, Letter Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect (2018) Niesner D, Hauck M, Shrestha S, Levchuk I, Matt G, Osvet A, Batentschuk M, et al. Journal article, Original article Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Journal article, Letter Landau-Zener-Stückelberg interferometer on attosecond timescales in graphene (2018) Higuchi T, Heide C, Ullmann K, Weber HB, Hommelhoff P Conference contribution Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Conference contribution