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Dr.-Ing. Johannes Steiner
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Institute Materials for Electronics and Energy Technology (i-MEET)
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Publications
(21)
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Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019)
Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P
Journal article
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