Albert-Marcel Schrotz

Lehrstuhl für Intelligente Technische Elektronik und Systeme Lehrstuhl für Technische Elektronik (LTE) Technische Fakultät

A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS (2025) Vilyuk K, Scheller K, Hetterle P, Probst F, Engelmann A, Schrotz AM, Franchi N, Weigel R Conference contribution, Conference Contribution A 150-168 GHz Mixer and Quadrupler Unit in SiGe BiCMOS Technology for JCAS Applications Based on DDS Signal Generation Up to 5 GHz (2025) Isbilen T, Breun S, Arneth N, Schrotz AM, Scheller K, Franchi N, Weigel R Conference contribution, Conference Contribution A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOI (2025) Scheller K, Engelmann A, Hetterle P, Weigel R, Schrotz AM, Fischer G Conference contribution, Conference Contribution A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe Technology (2025) Schrotz AM, Breun S, Fischer G, Weigel R Conference contribution, Conference Contribution A 304 to 337 GHz Push-Push Frequency Doubler with 6.8 dBm Pmax using T-Junction Combining in 90 nm SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Franchi N, Weigel R Conference contribution, Conference Contribution A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Fischer G, Weigel R Conference contribution A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI (2024) Scheller K, Engelmann A, Probst F, Flohr M, Weigel R, Schrotz AM, Fischer G Conference contribution, Conference Contribution A mm-wave Active Power Splitter with Digital Gain Control in 22nm FDSOI (2024) Engelmann A, Loose M, Probst F, Hetterle P, Scheller K, Weigel R, Schrotz AM, Fischer G Conference contribution A 1.7 dBm OP1dB D-Band Up-Conversion Mixer Utilizing Adaptive Back-Gate Bias in 22 nm FDSOI (2024) Huang T, Hetterle P, Engelmann A, Probst F, Schrotz AM, Weigel R, Fischer G Conference contribution, Conference Contribution A 296-336 GHz 2 dBm Pmax Frequency Octupler Using Bootstrapped and Push-Push Topology in 90 nm SiGe BiCMOS Technology (2024) Breun S, Schrotz AM, Koch M, Fischer G, Weigel R Conference contribution, Conference Contribution