Prof. Dr. Heiner Ryssel

Technische Fakultät

The impact of mass resolution on molybdenum contamination for B, P, BF 2, and As implantations (2006) Häublein V, Frey L, Ryssel H Conference contribution, Conference Contribution Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements (2006) Rambach M, Frey L, Bauer A, Ryssel H Authored book, Volume of book series Wafer scale characterization of interface state densities without test structures by photocurrent analysis (2005) Rommel M, Groß M, Frey L, Bauer A, Ryssel H Conference contribution, Conference Contribution Triple trench gate IGBTs (2005) Berberich SE, Bauer A, Frey L, Ryssel H Conference contribution, Conference Contribution Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics (2005) Bauer A, Paskaleva A, Lemberger M, Frey L, Ryssel H Conference contribution, Conference Contribution Implantation and Annealing of Aluminum in 4H Silicon Carbide (2005) Rambach M, Schmid F, Krieger M, Frey L, Bauer A, Pensl G, Ryssel H Journal article Investigations into the wear of a WL10 ion source (2005) Haeublein V, Sadrawetz S, Frey L, Martinz HP, Ryssel H Journal article, Original article Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005) Lemberger M, Paskaleva A, Zürcher S, Bauer A, Frey L, Ryssel H Journal article, Original article Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren (2005) Frey L, Bauer A, Ryssel H Journal article, Original article Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers (2005) Rommel M, Groß M, Ettinger A, Lemberger M, Bauer A, Frey L, Ryssel H Journal article, Original article