Prof. Dr. Heiner Ryssel

Technische Fakultät

A multi-laminate wire mesh ionizer for a Cs sputter negative ion source (1996) Jiao G, Bogen S, Frey L, Ryssel H Journal article, Original article A comparison of focused ion beam and electron beam induced deposition processes (1996) Lipp S, Frey L, Lehrer C, Demm E, Pauthner S, Ryssel H Journal article, Original article Model for the electronic stopping of channeled ions in silicon around the stopping power maximum (1995) Frey L, Ryssel H, Bogen S, Hobler G, Simionescu A Journal article, Original article Local material removal by focused ion beam milling and etching (1995) Lipp S, Frey L, Franz G, Demm E, Petersen S, Ryssel H Journal article, Original article Improved delineation technique for two dimensional dopant profiling (1995) Gong L, Petersen S, Frey L, Ryssel H Journal article, Original article Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility (1995) Bogen S, Körber K, Gong L, Frey L, Ryssel H Journal article, Original article Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing (1994) Biró L, Gyulai J, Bogen S, Frey L, Ryssel H Journal article, Original article Practical aspects of ion beam analysis of semiconductor structures (1994) Frey L, Pichler P, Kasko I, Thies I, Lipp S, Streckfuss N, Gong L, Ryssel H Journal article, Original article Athermal effects in ion implanted layers (1994) Gyulai J, Ryssel H, Biró L, Frey L, Kuki A, Kormány T, Serfozo G, Khanh N Journal article, Original article Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon (1994) Gong L, Bogen S, Frey L, Jung W, Ryssel H Journal article, Original article