apl. Prof. Dr. Martin Hundhausen

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors (1995) Hundhausen M, Ley L Journal article Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin (1995) Hundhausen M, Ley L Journal article Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e (1995) Hundhausen M, Ley L Journal article Nanometer‐scale modification of the tribological properties of Si(100) by scanning force microscope (1995) Hundhausen M, Ley L Journal article, Original article Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures (1994) Hundhausen M, Ley L Journal article Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique (1994) Hundhausen M Journal article The influence of surface treatment on the electronic structure of CVD diamond films (1994) Ristein J, Hundhausen M, Ley L Journal article Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors (1994) Hundhausen M, Ley L Journal article Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices (1994) Hundhausen M, Ley L Journal article Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air (1994) Hundhausen M, Ley L Journal article