apl. Prof. Dr. Martin Hundhausen

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling (2003) Durst F, Hundhausen M, Winnacker A, Ley L Journal article Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling (2003) Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A Journal article, Original article Investigation of mass transport during PVT growth of SiC by 13C labelling of source material (2003) Hundhausen M, Winnacker A, Ley L Journal article Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen (2002) Ley L, Hundhausen M Journal article Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy (2002) Hundhausen M, Ley L Journal article Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy (2002) Hundhausen M, Ley L Journal article Analysis of the moving photocarrier grating technique for semiconductors of high defect density (2001) Hundhausen M, Ley L Journal article Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC (2001) Hundhausen M, Ley L Journal article Silicon Carbide and Related Materials (ECSCRM 2000) (2001) Hundhausen M Edited Volume Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry (2001) Hundhausen M, Ley L Journal article