Tomasz Sledziewski

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Chair of Applied Physics (LAP)
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Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition (2016) Sledziewski T, Vivona M, Alassaad K, Kwasnicki P, Arvinte R, Beljakowa S, Weber HB, et al. Journal article, Letter Doping of 4H-SiC with group IV elements (2016) Krieger M, Rühl M, Sledziewski T, Ellrott G, Palm T, Weber HB, Bockstedte MG Journal article, Letter Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces (2016) Sledziewski T, Weber HB, Krieger M Journal article, Letter Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC (2015) Sledziewski T, Ellrott G, Rösch W, Weber HB, Krieger M Journal article Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition (2014) Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, et al. Journal article, Original article