Philip Hens

Graduiertenzentrum der FAU

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy (2014) Schimmel S, Kaiser M, Jokubavicius V, Ou Y, Hens P, Linnarsson MK, Sun J, et al. Journal article Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates (2013) Jokubavicius V, Kaiser M, Hens P, Wellmann P, Liljedahl R, Yakimova R, Syväjärvi M Journal article, Original article Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy (2013) Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P Journal article, Original article Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates (2013) Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, et al. Journal article, Original article Effects of source material on epitaxial growth of fluorescent SiC (2012) Jokubavicius V, Hens P, Liljedahl R, Sun JW, Kaiser M, Wellmann P, Sano S, et al. Journal article Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100) (2012) Hens P, Wagner G, Hölzing A, Hock R, Wellmann P Journal article Nucleation Control of Cubic Silicon Carbide on 6H-Substrates (2012) Vasiliauskas R, Marinova M, Hens P, Wellmann P, Syvajarvi M, Yakimova R Journal article Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy (2011) Hens P, Mueller J, Fahlbusch L, Spiecker E, Wellmann P, Spiecker E Journal article, Original article Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100) (2010) Hens P, Wagner G, Hölzing A, Hock R, Wellmann P Journal article, Original article Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction (2010) Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P Journal article, Original article