Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
MOCVD of titanium dioxide on the basis of new precursors (2002)
Leistner T, Lehmbacher K, Härter P, Schmidt C, Bauer A, Frey L, Ryssel H
Journal article, Original article
Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents (2002)
Jank M, Frey L, Bauer A, Ryssel H
Conference contribution, Conference Contribution
Influence of photoresist pattern on charging damage during high current ion implantation (2002)
Dirnecker T, Ruf A, Frey L, Beyer A, Bauer A, Henke D, Ryssel H
Conference contribution, Conference Contribution
Effect of barium contamination on gate oxide integrity in high-k dram (2002)
Boubekeur H, Mikolajick T, Bauer A, Frey L, Ryssel H
Journal article, Original article
Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining (2001)
Lehrer C, Frey L, Petersen S, Sulzbach T, Ohlsson O, Dziomba T, Danzebrink H, Ryssel H
Journal article, Original article
Limitations of focused ion beam nanomachining (2001)
Lehrer C, Frey L, Petersen S, Ryssel H
Journal article, Original article
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides (2001)
Jank M, Lemberger M, Bauer A, Frey L, Ryssel H
Journal article, Original article
Impact of platinum contamination on ferroelectric memories (2001)
Boubekeur H, Mikolajick T, Nagel N, Dehm C, Pamler W, Bauer A, Frey L, Ryssel H
Conference contribution, Conference Contribution
Barium, strontium and bismuth contamination in CMOS processes (2001)
Boubekeur H, Mikolajick T, Höpfner J, Dehm C, Pamler W, Steiner J, Kilian G, et al.
Authored book, Volume of book series
Phosphorus Ion Shower Implantation for special power IC applications (2000)
Kröner F, Schork R, Frey L, Burenkov A, Ryssel H
Conference contribution, Conference Contribution