Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides (2001)
Jank MPM, Lemberger M, Bauer A, Frey L, Ryssel H
Journal article, Original article
Impact of platinum contamination on ferroelectric memories (2001)
Boubekeur H, Mikolajick T, Nagel N, Dehm C, Pamler W, Bauer A, Frey L, Ryssel H
Conference contribution, Conference Contribution
Barium, strontium and bismuth contamination in CMOS processes (2001)
Boubekeur H, Mikolajick T, Höpfner J, Dehm C, Pamler W, Steiner J, Kilian G, et al.
Authored book, Volume of book series
Phosphorus Ion Shower Implantation for special power IC applications (2000)
Kröner F, Schork R, Frey L, Burenkov A, Ryssel H
Conference contribution, Conference Contribution
Defects and gallium - Contamination during focused ion beam micro machining (2000)
Lehrer C, Frey L, Petersen S, Mizutam M, Takai M, Ryssel H
Conference contribution, Conference Contribution
Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide (1999)
Bauer A, Mayer P, Frey L, Haeublein V, Ryssel H
Conference contribution, Conference Contribution
Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO (1999)
Bauer A, Mayer P, Frey L, Haeublein V, Ryssel H
Conference contribution, Conference Contribution
Local material removal by focused ion beam milling and etching (1995)
Lipp S, Frey L, Franz G, Demm E, Petersen S, Ryssel H
Journal article, Original article
Improved delineation technique for two dimensional dopant profiling (1995)
Gong L, Petersen S, Frey L, Ryssel H
Journal article, Original article
Tribological properties of carbonized photoresist (1991)
Oechsner R, Kluge A, Frey L, Ryssel H
Journal article, Original article