Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Full wafer microlens replication by UV imprint lithography (2010) Schmitt H, Rommel M, Bauer A, Frey L, Bich A, Eisner M, Voelkel R, Hornung M Journal article NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications (2010) Le-Huu M, Schrey F, Grieb M, Schmitt H, Haeublein V, Bauer A, Ryssel H, Frey L Authored book, Volume of book series Honeycomb voids due to ion implantation in germanium (2010) Kaiser RJ, Koffel S, Pichler P, Bauer AJ, Amon B, Claverie A, Benassayag G, et al. Journal article, Original article Future challenges in CMOS process modeling (2010) Pichler P, Burenkov A, Lorenz J, Kampen C, Frey L Journal article, Original article SiC ceramic micropatterns from polycarbosilanes (2010) Jang YS, Jank M, Maier V, Durst K, Travitzky N, Zollfrank C Journal article Reduced on resistance in LDMOS devices by integrating trench gates into planar technology (2010) Erlbacher T, Bauer AJ, Frey L Journal article, Original article Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations (2010) Rommel M, Jambreck JD, Ebm C, Platzgummer E, Bauer AJ, Frey L Journal article, Original article Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles (2010) Walther S, Schäfer S, Jank MPM, Thiem H, Peukert W, Frey L, Ryssel H Journal article, Original article Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing (2010) Jambreck JD, Schmitt H, Amon B, Rommel M, Bauer AJ, Frey L Journal article, Original article Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks (2010) Hinz J, Bauer AJ, Thiede T, Fischer RA, Frey L Journal article, Original article
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