Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Fundamental Efficiency Limits in Power Electronic Systems (2016)
Heckel T, Rettner C, März M
Conference contribution, Conference Contribution
Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs (2016)
Kreutzer O, Heckel T, März M
Authored book, Volume of book series
Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear (2016)
Oertel S, Jank M, Frey L, Hofmann C, Lang N, Struck M
Conference contribution, Conference Contribution
Slew rate control of a 600 V 55 mΩ GaN cascode (2016)
Endruschat A, Heckel T, Reiner R, Waltereit P, Quay R, Ambacher O, März M, et al.
Conference contribution, Conference Contribution
Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications (2016)
Banzhaf S, Schwaiger S, Erlbacher T, Bauer A, Frey L
Conference contribution, Conference Contribution
Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication (2016)
Rumler M, Kollmuss M, Baier L, Michel F, Förthner M, Becker M, Rommel M, Frey L
Conference contribution
Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization (2016)
Matthus C, Erlbacher T, Burenkov A, Bauer A, Frey L
Journal article, Original article
Conduction loss reduction for bipolar injection field-effect-transistors (BIFET) (2016)
Hürner A, Mitlehner H, Erlbacher T, Bauer A, Frey L
Authored book, Volume of book series
Non-isolated three-port DC/DC converter for ±380V DC microgrids (2016)
Han Y, Kaiser J, Ott L, Schulz M, Fersterra F, Wunder B, März M
Conference contribution, Conference Contribution
Optimum gate driver design to reach SiC-MOSFET's full potential - Speeding up to 200 kV/μs (2015)
Kreutzer O, Eckardt B, März M
Conference contribution