Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

Show on Map:

close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV (2019) Grünler S, Rattmann G, Erlbacher T, Bauer AJ, Krach F, Frey L Conference contribution Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride (2019) Boettcher N, Heckel T, Erlbacher T, Pelaic K Conference contribution An isolated bidirectional half-bridge active-clamp current-fed push-pull DC/DC converter for DC microgrid applications (2019) Schulz M, Ditze S, Diller M, Han Y, März M Conference contribution, Conference Contribution Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019) Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L Conference contribution Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019) Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019) Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T Conference contribution Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019) Rusch O, Moult J, Erlbacher T Conference contribution Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019) Weiße J, Mitlehner H, Frey L, Erlbacher T Conference contribution
‹ 1 ... 20 21 22 23 24 ... 50 ›