Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics (2019) Rattmann G, Pichler P, Erlbacher T Journal article A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors (2019) Endruschat A, Novak C, Gerstner H, Heckel T, Joffe C, März M Journal article Influence of Binaural Processing on Objective Perceptual Quality Assessment (2019) Delgado P, Fleischmann F, Herre J Conference contribution Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals (2019) Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P Journal article Deeper insight into lifetime-engineering in 4H-SiC by ion implantation (2019) Erlekampf J, Kallinger B, Weiße J, Rommel M, Berwian P, Friedrich J, Erlbacher T Journal article Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors (2019) Schlichting H, Sledziewski T, Bauer A, Erlbacher T Journal article Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy (2019) Hutzler A, Fritsch B, Jank MPM, Branscheid R, Spiecker E, März M Journal article, Original article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices (2019) Schriefer T, Hofmann M Journal article Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments (2019) Yu Z, Wang S, Letz S, Bayer CF, Häußler F, Schletz A, SUGANUMA K Conference contribution, Conference Contribution