Universität Stuttgart

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices (2012) Schulze J, Oehme M, Werner J Journal article Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si (2012) Werner J, Oehme M, Schirmer A, Kasper E, Schulze J Journal article Stochastic evaluation of mixing-controlled steady-state plume lengths in two-dimensional heterogeneous domains (2012) Cirpka OA, Rolle M, Chiogna G, De Barros FP, Nowak W Journal article Recent developments in Ge dots grown on pit-patterned surfaces (2012) Karmous A, Fischer IA, Kirfel O, Mattes J, Oehme M, Werner J, Schulze J Journal article Towards electrical detection of plasmons in all-silicon pin-diodes (2012) Fischer IA, Wu JL, Vogelgesang R, Schulze J Journal article Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes (2012) Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J Journal article Epitaxially grown indium phosphide quantum dots on a virtual Ge substrate realized on Si(001) (2012) Wiesner M, Bommer M, Schulz WM, Etter M, Werner J, Oehme M, Schulze J, et al. Journal article Improving the on-resistance of FETs for power applications (2012) Isemann H, Fischer I, Hahnel D, Oehme M, Schulze J Conference contribution Tuning the germanium TFET: Device optimization for maximum ion (2012) Hähnel D, Fischer I, Isemann H, Oehme M, Schulze J Conference contribution CMOS-compatible plasmon propagation and detection in vertical Si and Ge p-i-n diodes (2012) Fischer IA, Eßlinger M, Vogelgesang R, Wu JL, Schulze J Conference contribution