Universität Stuttgart

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz (2014) Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, Kaschel M, et al. Journal article Grasping devices and methods in automated production processes (2014) Fantoni G, Santochi M, Dini G, Tracht K, Scholz-Reiter B, Fleischer J, Lien TK, et al. Journal article Luminescence from germanium and germanium on silicon (2014) Arguirov T, Kittler M, Oehme M, Abrosimov NV, Vyvenko OF, Kasper E, Schulze J Conference contribution High performance triangular barrier engineered NIPIN selector for bipolar RRAM (2014) Meshram R, Das B, Mandapati R, Lashkare S, Deshmukh S, Lodha S, Ganguly U, Schulze J Conference contribution GeSn/Ge multiquantum well photodetectors on Si substrates (2014) Oehme M, Widmann D, Kostecki K, Zaumseil P, Schwartz B, Gollhofer M, Koerner R, et al. Journal article High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM (2014) Mandapati R, Shrivastava S, Das B, Sushama S, Ostwal V, Schulze J, Ganguly U Conference contribution Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications (2014) Das B, Meshram R, Ostwal V, Schulze J, Ganguly U Conference contribution Extraction of GeSn absorption coefficients from photodetector response (2014) Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, et al. Conference contribution Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts (2014) Fischer IA, Chang LT, Sürgers C, Chiussi S, Wang KL, Schulze J Conference contribution A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors (2014) Zhang W, Ye K, Bechler S, Ulbricht K, Oehme M, Kasper E, Schulze J Conference contribution