Infineon Technologies Austria AG

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs (2019) Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G Journal article Noninvasive binary gas mixture measurements with a millimeter-wave low-cost FMCW radar system (2019) Och A, Schrattenecker J, Schuster S, Holzl PA, Freidl PF, Weigel R Conference contribution Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019) Höchbauer T, Heidorn C, Tsavdaris N Conference contribution Accuracy bounds and measurements of a contactless permittivity sensor for gases using synchronized low-cost mm-wave frequency modulated continuous wave radar transceivers (2019) Och A, Schrattenecker JO, Schuster S, Hölzl PA, Freidl PF, Scheiblhofer S, Zankl D, Weigel R Journal article Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes (2019) Rasinger F, Prohinig J, Schulze H, Schulze HJ, Pobegen G Journal article A Scalable 77 GHz Massive MIMO FMCW Radar by Cascading Fully-Integrated Transceivers (2018) Och A, Pfeffer C, Schrattenecker J, Schuster S, Weigel R Conference contribution, Conference Contribution A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS (2018) Issakov V, Rimmelspacher J, Rimmelspacher J, Trotta S, Tiebout M, Hagelauer AM, Weigel R Journal article A 52-to-61 GHz Push-Push VCO in 28 nm CMOS (2018) Issakov V, Padovan F, Rimmelspacher J, Weigel R, Geiselbrechtinger A Conference contribution, Conference Contribution The 2018 GaN power electronics roadmap (2018) Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, et al. Journal article, Review article