Institute Materials for Electronics and Energy Technology (i-MEET)

On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements (2001) Wellmann P, Bushevoy S, Weingärtner R Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article 2.5% efficient organic plastic solar cells (2001) Shaheen SE, Brabec C, Sariciftci NS Journal article, Original article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg (2001) Wellmann P Authored book SiC crystal growth from the vapor and liquid phase (2001) Hofmann HD, Bickermann M, Ebling D, Epelbaum B, Kadinski L, Selder M, Straubinger T, et al. Journal article, Original article Study of boron incorporation during PVT growth of p-type SiC crystals (2001) Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Conditions for the Invertibility of the Isoparametric Mapping for 3D Multilinear Finite Elements (2001) Knabner P, Korotov S, Summ G Conference contribution