Department Elektrotechnik-Elektronik-Informationstechnik (EEI)

Orientierbarkeit des Raumes der Parallelschlitzgebiete (1997) Müller M Thesis Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface (1997) Frey L, Stoemenos J, Schork R, Nejim A, Hemment P Journal article, Original article New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr (1997) Biró L, Gyulai J, Havancsák K, Didyk A, Bogen S, Frey L, Ryssel H Journal article, Original article Microanalysis of impurity contamination in masklessly etched area using focused ion beam (1997) Park Y, Takai M, Nagai T, Kishimoto T, Lehrer C, Frey L, Ryssel H Journal article, Original article Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry (1997) Schwenke H, Knoth J, Fabry L, Pahlke S, Scholz R, Frey L Journal article, Original article In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions (1997) Biró L, Gyulai J, Havancsák K, Didyk A, Frey L, Ryssel H Journal article, Original article Distortion of sims profiles due to ion beam mixing (1997) Saggio M, Montandon C, Bourenkov A, Frey L, Pichler P Journal article, Original article 2, 5 THz Open Structure Corner Cube Mixer with Substrateless Schottky Diodes (1997) Huber K, Hillermeier R, Brand H, Simon A, Lin C, Rodriguez-Giro\-Nes M, Hartnagel H Conference contribution, Conference Contribution Der Mensch und sein Handy - wie gefährlich ist das elektromagnetische Strahlungsfeld eines Mobilfunkgerätes (1997) Brand H, Dlouhy R, Schaller G Other publication type Short Range Imaging Radiometry at 600 GHz (1997) Rehm G, Guckenberger K, Huber K, Brand H Conference contribution, Conference Contribution