Lehrstuhl für Elektronische Bauelemente

The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Journal article Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten (2023) Schmidt R Thesis Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx (2023) Berkmann F, Steuer O, Ganss F, Prucnal S, Schwarz D, Fischer IA, Schulze J Journal article Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions (2023) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Journal article High mobility Ge 2DHG based MODFETs for low-temperature applications (2023) Weißhaupt D, Funk HS, Oehme M, Bloos D, Berkmann F, Seidel L, Fischer IA, Schulze J Journal article Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation (2023) Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, et al. Journal article Junior Research Group on Nitride Semiconductors (2023) Schimmel S Conference contribution, Abstract of a poster 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design (2023) Schraml M, Papathanasiou N, May A, Rommel M, Erlbacher T Conference contribution The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Becker T Authored book, Volume of book series Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate (2023) Becker T Authored book, Volume of book series