Chair of Applied Physics (LAP)

Room temperature terahertz detection by rectifying field effect transistors (2019) Preu S, Regensburger S, Lu H, Gossard AC Conference contribution Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019) Höchbauer T, Heidorn C, Tsavdaris N Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes (2019) Rasinger F, Prohinig J, Schulze H, Schulze HJ, Pobegen G Journal article Lightwave-controlled electron dynamics in graphene (2019) Heide C, Higuchi T, Ullmann K, Weber HB, Hommelhoff P Conference contribution Growth of Monolayer WS2Single Crystals with Atmospheric Pressure CVD: Role of Temperature (2019) Xie Y, Wang G, Wang Z, Nan T, Wang H, Wang Y, Zhan Y, et al. Conference contribution Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime (2019) Heide C, Boolakee T, Higuchi T, Weber HB, Hommelhoff P Journal article Coherent Electron Trajectory Control in Graphene (2018) Heide C, Higuchi T, Weber HB, Hommelhoff P Journal article, Letter Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter