Department Physik


close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Improving the performance of supported ionic liquid phase (SILP) catalysts for the ultra-low-temperature water-gas shift reaction using metal salt additives (2019) Wolf P, Aubermann M, Wolf M, Bauer T, Blaumeiser D, Stepic R, Wick C, et al. Journal article Polarization and phase shifting interferometry (2019) Rothau S, Mantel K, Lindlein N Conference contribution Grazing incidence interferometry for testing rough asperics (2019) Rothau S, Schwider J, Mantel K, Lindlein N Conference contribution Interferometrie in streifender Inzidenz: Simulationen und Messergebnisse (2019) Rothau S, Schwider J, Mantel K, Lindlein N Conference contribution, Original article Vermessung konvexer, rauer Asphären mittels Interferometrie in streifender Inzidenz (2019) Rothau S, Schwider J, Mantel K, Lindlein N Conference contribution, Conference Contribution New concept of a polymer optical ray splitter simulated by Raytracing with a new Bisection-Algorithm (2019) Backhaus C, Dötzer F, Hoffmann GA, Lorenz L, Overmeyer L, Bock K, Lindlein N Conference contribution Optical simulations of printed Polymer Optical Waveguides (POWs): search for their optical limitations caused by fabrication and application geometry (2019) Backhaus C, Vögl C, Zeitler J, Reitberger T, Lindlein N, Franke J Conference contribution, Conference Contribution Coherent nonlinear optics of quantum emitters in nanophotonic waveguides (2019) Türschmann P, Le Jeannic H, Simonsen SF, Haakh HR, Götzinger S, Sandoghdar V, Lodahl P, Rotenberg N Journal article, Review article On-Surface Synthesis of Porous Carbon Nanoribbons on Silver: Reaction Kinetics and the Influence of the Surface Structure (2019) Ammon MM, Haller M, Sorayya S, Maier S Journal article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution