Journal of Applied Physics

Journal Abbreviation: J APPL PHYS
ISSN: 0021-8979
eISSN: 1089-7550
Publisher: AIP Publishing

Publications (176)

close-button

Types of publications

Journal article
Unpublished / Preprint

Publication year

From
To

Abstract

Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device (2020) Schnitzspan L, Tries A, Klaeui M Journal article Effect of interfacial oxidation layer in spin pumping experiments on Ni80Fe20/SrIrO3 heterostructures (2020) Suraj TS, Mueller M, Gelder S, Gepraegs S, Opel M, Weiler M, Sethupathi K, et al. Journal article Ion-mediated hopping electrode polarization model for impedance spectra of CH3NH3PbI3 (2020) Almora Rodriguez O, González-Lezcano A, Guerrero A, Brabec CJ, Garcia-Belmonte G Journal article, Original article Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas (2020) Augel L, Fischer IA, Gollhofer M, Oehme M, Schulze J Journal article High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy (2020) Bommanaboyena SP, Bergfeldt T, Heller R, Klaeui M, Jourdan M Journal article Crystal Hall and crystal magneto-optical effect in thin films of SrRuO3 (2020) Samanta K, Lezaic M, Merte M, Freimuth F, Bluegel S, Mokrousov Y Journal article ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding (2020) Kazantsev D, Ryssel H Journal article High temperature piezoelectric response of polycrystalline Li-doped (K,Na)NbO3 ceramics under compressive stress (2020) Martin A, Khansur NH, Eckstein U, Rieß K, Kakimoto KI, Webber KG Journal article Vertical breakdown of GaN on Si due to V-pits (2020) Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al. Journal article Reliability of charge carrier recombination data determined with charge extraction methods (2019) Kniepert J, Paulke A, Perdigón-Toro L, Kurpiers J, Zhang H, Gao F, Yuan J, et al. Journal article