Conference contribution
(Conference Contribution)


Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers


Publication Details
Author(s): Preu S, Regensburger S, Kim S, Mittendorff M, Winnerl S, Malzer S, Lu H, Burke P, Gossard A, Weber HB, Sherwin MS
Publisher: International Society for Optical Engineering; 1999
Publication year: 2013
Volume: 8900
ISSN: 0277-786X
Event: 6th International Conference on Millimetre Wave and Terahertz Sensors and Technology
Event location: Dresden

Abstract

We report on Terahertz (THz) detectors based on III-V high-electron- mobility field-effect transistors (FET). The detection results from a rectification process that is still highly efficient far above frequencies where the transistor provides gain. Several detector layouts have been optimized for specific applications at room temperature: we show a broadband detector layout, where the rectifying FET is coupled to a broadband logarithmic-periodic antenna. Another layout is optimized for mixing of two orthogonal THz beams at 370 GHz or, alternatively, 570 GHz. A third version uses a large array of FETs with very low access resistance allowing for detection of very short high-power THz pulses. We reached a time resolution of 20 ps. © 2013 SPIE.



How to cite
APA: Preu, S., Regensburger, S., Kim, S., Mittendorff, M., Winnerl, S., Malzer, S.,... Sherwin, M.S. (2013). Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers. Dresden, DE: International Society for Optical Engineering; 1999.

MLA: Preu, Sascha, et al. "Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers." Proceedings of the 6th International Conference on Millimetre Wave and Terahertz Sensors and Technology, Dresden International Society for Optical Engineering; 1999, 2013.

BibTeX: Download
Share link
Last updated on 2017-11-23 at 01:31
PDF downloaded successfully