Bulk growth of SiC

Wellmann P, Müller R, Sakwe A, Künecke U, Hens P, Stockmeier M, Konias K, Hock R, Magerl A, Pons M (2008)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2008

Journal

Publisher: Materials Research Society

Book Volume: 1069

Pages Range: 3-14

Conference Proceedings Title: MRS Proceedings / Volume 1069 / 2008

Event location: San Francisco, California US

DOI: 10.1557/PROC-1069-D01-01

Abstract

The paper reviews the basics of SiC bulk growth by the physical vapor transport (PVT) method and discusses current and possible future concepts to improve crystalline quality. In-situ process visualization using x-rays, numerical modeling and advanced doping techniques will be briefly presented which support growth process optimization. The ,,pure" PVT technique will be compared with related developments like the so called Modified-PVT, Continuous-Feeding-PVT, High-Temperature-CVD and Halide-CVD. Special emphasis will be put on dislocation generation and annihilation and concepts to reduce dislocation density during SiC bulk crystal growth. The dislocation study is based on a statistical approach. Rather than following the evolution of a single defect, statistic data which reflect a more global dislocation density evolution are interpreted. In this context a new approach will be presented which relates thermally induced strain during growth and dislocation patterning into networks.

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How to cite

APA:

Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14. https://dx.doi.org/10.1557/PROC-1069-D01-01

MLA:

Wellmann, Peter, et al. "Bulk growth of SiC." Materials Research Society Symposium - Proceedings 1069 (2008): 3-14.

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