Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces

Sledziewski T, Weber HB, Krieger M (2016)


Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2016

Journal

Publisher: Trans Tech Publications

Book Volume: 858

Pages Range: 697-700

DOI: 10.4028/www.scientific.net/MSF.858.697

Authors with CRIS profile

How to cite

APA:

Sledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.697

MLA:

Sledziewski, Tomasz, Heiko B. Weber, and Michael Krieger. "Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces." Materials Science Forum 858 (2016): 697-700.

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