Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

Wehrfritz P, Fromm F, Malzer S, Seyller T (2014)


Publication Type: Journal article

Publication year: 2014

Journal

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 47

Pages Range: 305103 (5pp)

DOI: 10.1088/0022-3727/47/30/305103

Abstract

We report on top-gated field effect devices built from quasi-freestanding monolayer graphene (QFMLG) on 6H-SiC(0001) in combination with a silicon nitride (SiN) gate dielectric. SiN was grown by plasma enhanced chemical vapour deposition. The composition of the dielectric was investigated by x-ray photoelectron spectroscopy (XPS). Spectroscopic and electrical characterization of the graphene layers were done by XPS, Raman spectroscopy and Hall effect measurements before and after SiN deposition. In contrast to previous reports on SiN/graphene, we observe that our dielectric layer induces strong n-type doping. With such a gate insulator, the neutrality level of the QFMLG could be accessed by an appropriate gate voltage. © 2014 IOP Publishing Ltd.

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How to cite

APA:

Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2014). Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate. Journal of Physics D-Applied Physics, 47, 305103 (5pp). https://dx.doi.org/10.1088/0022-3727/47/30/305103

MLA:

Wehrfritz, Peter, et al. "Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate." Journal of Physics D-Applied Physics 47 (2014): 305103 (5pp).

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