Hundhausen M, Ley L (2004)
Publication Type: Journal article
Publication year: 2004
Publisher: Trans Tech Publications
Book Volume: 457-460
Pages Range: 617
Using 3C-SiC crystals grown on undulant Si(100) substrates as seed crystals, bulk growth of 3C-SiC by the modified Lely method has been demonstrated. However, particularly at elevated growth temperatures, macroscopic 6H-SiC inclusions can be observed in the grown crystals. Here we investigate the temperature dependence of the 3C- to 6H-SiC transformation of the CVD substrate by Micro Raman Spectroscopy after annealing at temperatures between 1700°C and 2100°C. At temperatures above 1800°C 3C- to 6H-SiC polytype transformation is observed that proceeds from the top side of the crystals. However, the conversion appears to be stopped at domain boundaries that are oriented along {111} planes.
APA:
Hundhausen, M., & Ley, L. (2004). Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy. Materials Science Forum, 457-460, 617.
MLA:
Hundhausen, Martin, and Lothar Ley. "Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy." Materials Science Forum 457-460 (2004): 617.
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