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Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors


Publication Details
Author(s): Noll S, Rambach M, Grieb M, Scholten D, Bauer A, Frey L
Publisher: Trans Tech Publications Ltd
Publication year: 2014
Pages range: 702-705
ISBN: 9783038350101
Event: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Event location: Miyazaki

Abstract

A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too. © (2014) Trans Tech Publications, Switzerland.



How to cite
APA: Noll, S., Rambach, M., Grieb, M., Scholten, D., Bauer, A., & Frey, L. (2014). Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors. Trans Tech Publications Ltd.

MLA: Noll, Stefan, et al. Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors. Trans Tech Publications Ltd, 2014.

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