Patterning and visualizing self-assembled monolayers with low-energy electrons
Krupke R, Malik S, Weber HB, Hampe O, Kappes M, von Löhneysen H (2002)
Publication Status: Published
Publication Type: Journal article
Publication year: 2002
Journal
Publisher: AMER CHEMICAL SOC
Book Volume: 2
Pages Range: 1161-1164
Journal Issue: 10
DOI: 10.1021/nl025679e
Abstract
We show that a trimethylsilyl (TMS) self-assembled monolayer on a silicon surface is a self-developing positive resist, which can be patterned with low energy electrons. Contact angle measurements have been used to quantify the efficiency of the exposure as a function of exposure dose and acceleration voltage. Ash formation was negligible, as a 3-aminopropyltriethoxysilane (APTES) self-assembled monolayer could be formed on the patterned area without an intermediate development stage. APTES/TMS patterns have been visualized with scanning electron microscopy at low energy and atomic force microscopy. The functionality of the patterns has been tested by selective deposition of carbon nanotubes.
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Germany (DE)How to cite
APA:
Krupke, R., Malik, S., Weber, H.B., Hampe, O., Kappes, M., & von Löhneysen, H. (2002). Patterning and visualizing self-assembled monolayers with low-energy electrons. Nano Letters, 2(10), 1161-1164. https://dx.doi.org/10.1021/nl025679e
MLA:
Krupke, Ralph, et al. "Patterning and visualizing self-assembled monolayers with low-energy electrons." Nano Letters 2.10 (2002): 1161-1164.
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