Journal article
(Letter)


Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces


Publication Details
Author(s): Sledziewski T, Weber HB, Krieger M
Publisher: Trans Tech Publications
Publication year: 2016
Volume: 858
Pages range: 697-700
ISSN: 0255-5476
eISSN: 1662-9752
Language: English



Focus Area of Individual Faculties


How to cite
APA: Sledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.697

MLA: Sledziewski, Tomasz, Heiko B. Weber, and Michael Krieger. "Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces." Materials Science Forum 858 (2016): 697-700.

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