On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs

Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M (2016)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2016

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 858

Journal Issue: 473

DOI: 10.4028/www.scientific.net/MSF.858.473

Authors with CRIS profile

Julietta Förthner Lehrstuhl für Elektronische Bauelemente Martin Hauck Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

How to cite

APA:

Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473

MLA:

Pobegen, Gregor, et al. "On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs." Materials Science Forum 858.473 (2016).

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