Journal article
(Letter)


On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs


Publication Details
Author(s): Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M
Publisher: Trans Tech Publications
Publication year: 2016
Volume: 858
Journal issue: 473
ISSN: 0255-5476
eISSN: 1662-9752
Language: English



Focus Area of Individual Faculties


How to cite
APA: Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473

MLA: Pobegen, Gregor, et al. "On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs." Materials Science Forum 858.473 (2016).

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