Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy

Hens P, Mueller J, Fahlbusch L, Spiecker E, Wellmann P, Spiecker E (2011)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Book Volume: 679-680

Pages Range: 127-130

Conference Proceedings Title: Materials Science Forum (Volumes 679-680)

DOI: 10.4028/www.scientific.net/MSF.679-680.127

Abstract

A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these "type II voids" as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.

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APA:

Hens, P., Mueller, J., Fahlbusch, L., Spiecker, E., Wellmann, P., & Spiecker, E. (2011). Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy. Materials Science Forum, 679-680, 127-130. https://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.127

MLA:

Hens, Philip, et al. "Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy." Materials Science Forum 679-680 (2011): 127-130.

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