Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states

Connaughton S, Hobbs R, Lotty O, Holmes JD, Krstic V (2015)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2015

Journal

Advanced Materials Interfaces WILEY-VCH Verlag GmbH & Co. KGaA

Publisher: WILEY-VCH Verlag GmbH & Co. KGaA

Book Volume: 2

Article Number: 1400469

URI: http://onlinelibrary.wiley.com/journal/10.1002/%28ISSN%292196-7350

DOI: 10.1002/admi.2014004

Abstract

An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core–shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

University College Cork (UCC) IE Ireland (IE) Trinity College Dublin IE Ireland (IE)

How to cite

APA:

Connaughton, S., Hobbs, R., Lotty, O., Holmes, J.D., & Krstic, V. (2015). Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states. Advanced Materials Interfaces, 2. https://dx.doi.org/10.1002/admi.2014004

MLA:

Connaughton, Stephen, et al. "Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states." Advanced Materials Interfaces 2 (2015).

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