Kißlinger F, Ott C, Heide C, Kampert E, Butz B, Spiecker E, Shallcross S, Weber HB (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Letter
Publication year: 2015
Publisher: Nature Publishing Group
Book Volume: 11
Pages Range: 650-+
DOI: 10.1038/NPHYS3368
The magnetoresistance of conductors usually has a quadratic dependence on magnetic field(1), however, examples exist of non-saturating linear behaviour in diverse materials(2-6). Assigning a specific microscopic mechanism to this unusual phenomenon is obscured by the co-occurrence and interplay of doping, mobility fluctuations and a polycrystalline structure(7,8). Bilayer graphene has virtually no doping fluctuations, yet provides a built-in mosaic tiling due to the dense network of partial dislocations(9,10). We present magnetotransport measurements of epitaxial bilayer graphene that exhibits a strong and reproducible linear magnetoresistance that persists to B = 62 T at and above room temperature, decorated by quantum interference effects at low temperatures. Partial dislocations thus have a profound impact on the transport properties in bilayer graphene, a system that is frequently assumed to be dislocation-free. It further provides a clear and tractable model system for studying the unusual properties of mosaic conductors.
APA:
Kißlinger, F., Ott, C., Heide, C., Kampert, E., Butz, B., Spiecker, E.,... Weber, H.B. (2015). Linear magnetoresistance in mosaic-like bilayer graphene. Nature Physics, 11, 650-+. https://dx.doi.org/10.1038/NPHYS3368
MLA:
Kißlinger, Ferdinand, et al. "Linear magnetoresistance in mosaic-like bilayer graphene." Nature Physics 11 (2015): 650-+.
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