Journal article
(Letter)


In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices


Publication Details
Author(s): Kolesnik-Gray M, Sorger C, Biswas S, Holmes JD, Weber HB, Krstic V
Publisher: American Institute of Physics (AIP)
Publication year: 2015
Volume: 106
ISSN: 0003-6951
Language: English

Abstract

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.



How to cite
APA: Kolesnik-Gray, M., Sorger, C., Biswas, S., Holmes, J.D., Weber, H.B., & Krstic, V. (2015). In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106. https://dx.doi.org/10.1063/1.4922527

MLA: Kolesnik-Gray, Maria, et al. "In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices." Applied Physics Letters 106 (2015).

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