Journal article
(Letter)


Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires


Publication Details
Author(s): Kolesnik-Gray M, Lutz T, Collins G, Biswas S, Holmes JD, Krstic V
Publisher: American Institute of Physics (AIP)
Publication year: 2013
Volume: 103
ISSN: 0003-6951
Language: English

Abstract

Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be gamma = 0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.



How to cite
APA: Kolesnik-Gray, M., Lutz, T., Collins, G., Biswas, S., Holmes, J.D., & Krstic, V. (2013). Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103. https://dx.doi.org/10.1063/1.4821996

MLA: Kolesnik-Gray, Maria, et al. "Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires." Applied Physics Letters 103 (2013).

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