Morphological impact of zinc oxide layers on the device performance in thin-film transistors

Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg B, Peukert W, Spiecker E, Halik M (2011)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2011

Journal

Publisher: Royal Society of Chemistry

Book Volume: 3

Pages Range: 897-899

Volume: 3

Issue: 3

Journal Issue: 3

URI: http://pubs.rsc.org/en/Content/ArticleLanding/2011/NR/c0nr00800a#!divAbstract

DOI: 10.1039/C0NR00800A

Abstract

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm² V−1 s−1 compared to 0.6 cm² V−1 s−1 for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

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APA:

Faber, H., Klaumünzer, M., Voigt, M., Galli, D., Vieweg, B., Peukert, W.,... Halik, M. (2011). Morphological impact of zinc oxide layers on the device performance in thin-film transistors. Nanoscale, 3(3), 897-899. https://dx.doi.org/10.1039/C0NR00800A

MLA:

Faber, Hendrik, et al. "Morphological impact of zinc oxide layers on the device performance in thin-film transistors." Nanoscale 3.3 (2011): 897-899.

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