A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

Krach F, Hertel S, Waldmann D, Jobst J, Krieger M, Reshanov S, Schoner A, Weber HB (2012)

Publication Type: Journal article, Letter

Publication year: 2012

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 100

Pages Range: 122102

DOI: 10.1063/1.3695157

Abstract

Due to the lack of graphene transistors with large on/off ratio, we propose a concept employing both epitaxial graphene and its underlying substrate silicon carbide (SiC) as electronic materials. We demonstrate a simple, robust, and scalable transistor, in which graphene serves as electrodes and SiC as a semiconducting channel. The common interface has to be chosen such that it provides favorable charge injection. The insulator and gate functionality is realized by an ionic liquid gate for convenience but could be taken over by a solid gate stack. On/off ratios exceeding 44000 at room temperature are found. © 2012 American Institute of Physics.

Authors with CRIS profile

Florian Krach Lehrstuhl für Elektronische Bauelemente Stefan Hertel Chair of Applied Physics Daniel Waldmann Chair of Applied Physics Johannes Jobst Chair of Applied Physics Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Acreo AB SE Sweden (SE)

How to cite

APA:

Krach, F., Hertel, S., Waldmann, D., Jobst, J., Krieger, M., Reshanov, S.,... Weber, H.B. (2012). A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel. Applied Physics Letters, 100, 122102. https://dx.doi.org/10.1063/1.3695157

MLA:

Krach, Florian, et al. "A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel." Applied Physics Letters 100 (2012): 122102.

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